HXY MOSFET APT45GR65B-HXY
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
APT45GR65B-HXY
Package:
TO-247
Customer #:
Key Attributes:
IGBT 650V 80A TO-247
Description:
IGBT 650V 80A 250W Through Hole TO-247
Datasheet:
HXY MOSFET APT45GR65B-HXY
Products Specifications
Manufacturer:
Package:
TO-247
Pd - Power Dissipation:
250W
Td(off):
110ns
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
1.916nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@250uA
Gate Charge(Qg):
71nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
56ns
Switching Energy(Eoff):
510uJ
Turn-On Energy (Eon):
1.35mJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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