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HUAYI HYG200N12NS1C2

HUAYI HYG200N12NS1C2

Name: HUAYI HYG200N12NS1C2
Brand: HUAYI

Manufacturer: HUAYI Asian Brands

Mfr. Part #: HYG200N12NS1C2

Package: PDFN-8(5x5.8)

Customer #:

Key Attributes: N-Channel Enhancement Mode MOSFET, Current:60A, Voltage:120V

Description: 120V 60A 18.5mΩ@10V 4V@250uA 1 N-channel 125W PDFN-8(5x5.8) Single FETs, MOSFETs RoHS

Datasheet: HUAYI HYG200N12NS1C2

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

HUAYI

Package:

PDFN-8(5x5.8)

Drain to Source Voltage:

120V

Current - Continuous Drain(Id):

60A

Operating Temperature -:

-55℃~+175℃

RDS(on):

18.5mΩ@10V

Gate Threshold Voltage (Vgs(th)):

4V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

16.7pF

Number:

1 N-channel

Output Capacitance(Coss):

333pF

Input Capacitance(Ciss):

2.31nF

Pd - Power Dissipation:

125W

Gate Charge(Qg):

33.4nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	5000
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

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HUAYI

323 Products

Asian Brand

HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.

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