HUAYI HYG013N04NA1B6
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG013N04NA1B6
Package:
TO-263-6
Customer #:
Key Attributes:
Single N-Channel, Current: 354A, Voltage: 40V
Description:
40V 354A 1.3mΩ@10V 4V@250uA 326W TO-263-6 Single FETs, MOSFETs RoHS
Datasheet:
HUAYI HYG013N04NA1B6
Products Specifications
Manufacturer:
Package:
TO-263-6
Drain to Source Voltage:
40V
Current - Continuous Drain(Id):
354A
RDS(on):
1.3mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.028nF
Input Capacitance(Ciss):
12.097nF
Pd - Power Dissipation:
326W
Gate Charge(Qg):
265nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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