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HUAYI HYG042N10NS1P

HUAYI HYG042N10NS1P

Name: HUAYI HYG042N10NS1P
Brand: HUAYI

Manufacturer: HUAYI Asian Brands

Mfr. Part #: HYG042N10NS1P

Package: TO-220FB-3

Customer #:

Key Attributes: N-Channel Enhancement Mode MOSFET, Current: 160A, Voltage: 100V

Description: 100V 160A 4.2mΩ@10V 4V@250uA 200W TO-220FB-3 Single FETs, MOSFETs RoHS

Datasheet: HUAYI HYG042N10NS1P

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

HUAYI

Package:

TO-220FB-3

Drain to Source Voltage:

100V

Current - Continuous Drain(Id):

160A

RDS(on):

4.2mΩ@10V

Operating Temperature -:

-55℃~+175℃

Gate Threshold Voltage (Vgs(th)):

4V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

240pF

Output Capacitance(Coss):

2.506nF

Input Capacitance(Ciss):

7.04nF

Pd - Power Dissipation:

200W

Gate Charge(Qg):

119nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	50
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

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HUAYI

323 Products

Asian Brand

HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.

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