Home
/
Products
/
Discrete Semiconductors
/
Single FETs, MOSFETs
/
HUAYI HYG032N08NS1B6

HUAYI HYG032N08NS1B6

Name: HUAYI HYG032N08NS1B6
Brand: HUAYI

Manufacturer: HUAYI Asian Brands

Mfr. Part #: HYG032N08NS1B6

Package: TO-263-6L

Customer #:

Key Attributes: MOSFET N-CH 80V 200A TO-263-6L

Description: N-Channel 80V 200A 250W Surface Mount TO-263-6L

Datasheet: HUAYI HYG032N08NS1B6

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

HUAYI

Package:

TO-263-6L

Drain to Source Voltage:

80V

Current - Continuous Drain(Id):

200A

Operating Temperature -:

-55℃~+175℃

RDS(on):

2.5mΩ@10V,50A

Gate Threshold Voltage (Vgs(th)):

Reverse Transfer Capacitance (Crss@Vds):

176pF

Number:

1 N-channel

Pd - Power Dissipation:

250W

Input Capacitance(Ciss):

7.714nF

Gate Charge(Qg):

120nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	800
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

About Product

Get Best Price

Inquiry

Negotiate

Payment

Shipping

HUAYI

323 Products

Asian Brand

HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.

Learn More