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HUAYI HYG023N04NR1B

HUAYI HYG023N04NR1B

Name: HUAYI HYG023N04NR1B
Brand: HUAYI

Manufacturer: HUAYI Asian Brands

Mfr. Part #: HYG023N04NR1B

Package: TO-263-2L

Customer #:

Key Attributes: MOSFET N-CH 45V 200A TO-263-2L

Description: N-Channel 45V 200A 200W Surface Mount TO-263-2L

Datasheet: HUAYI HYG023N04NR1B

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

HUAYI

Package:

TO-263-2L

Drain to Source Voltage:

45V

Current - Continuous Drain(Id):

200A

Operating Temperature -:

-55℃~+175℃

RDS(on):

2.2mΩ@10V,40A

Gate Threshold Voltage (Vgs(th)):

2.8V

Reverse Transfer Capacitance (Crss@Vds):

532pF

Number:

1 N-channel

Input Capacitance(Ciss):

3.474nF

Pd - Power Dissipation:

200W

Gate Charge(Qg):

83nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	800
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

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HUAYI

323 Products

Asian Brand

HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.

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