HUAYI HYG020N04NR1B
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG020N04NR1B
Package:
TO-263-2L
Customer #:
Key Attributes:
N-Channel Enhancement Mode MOSFET
Description:
40V 220A 1.9mΩ@10V 2.6V@250uA 1 N-channel 200W TO-263-2L Single FETs, MOSFETs RoHS
Datasheet:
HUAYI HYG020N04NR1B
Products Specifications
Manufacturer:
Package:
TO-263-2L
Drain to Source Voltage:
40V
Current - Continuous Drain(Id):
220A
RDS(on):
1.9mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
707pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.392nF
Output Capacitance(Coss):
806pF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
110nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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