HUAYI HYG025N04NA1C2
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG025N04NA1C2
Package:
PDFN-8(5x6)
Customer #:
Key Attributes:
MOSFET N-CH 40V 190A PDFN-8(5x6)
Description:
N-Channel 40V 190A 130W Surface Mount PDFN-8(5x6)
Datasheet:
HUAYI HYG025N04NA1C2
Products Specifications
Manufacturer:
Package:
PDFN-8(5x6)
Drain to Source Voltage:
40V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
615pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.744nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
122.2nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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