HUAYI HYG350P13NA1B
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG350P13NA1B
Package:
TO-263-2
Customer #:
Key Attributes:
MOSFET P-CH 125V 39A TO-263-2
Description:
P-Channel 125V 39A 120W Surface Mount TO-263-2
Datasheet:
HUAYI HYG350P13NA1B
Products Specifications
Manufacturer:
Package:
TO-263-2
Drain to Source Voltage:
125V
Current - Continuous Drain(Id):
39A
RDS(on):
43mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
194.8pF
Number:
1 P-Channel
Output Capacitance(Coss):
285pF
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
4.118nF
Gate Charge(Qg):
79.4nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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