HUAYI HYG090N06LS1C2
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG090N06LS1C2
Package:
PDFN5x6-8L
Customer #:
Key Attributes:
MOSFET N-CH 60V 60A DFN-8(5.2x5.9)
Description:
N-Channel 60V 60A 62.5W Surface Mount DFN-8(5.2x5.9)
Datasheet:
HUAYI HYG090N06LS1C2
Products Specifications
Manufacturer:
Package:
PDFN5x6-8L
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
9.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
39pF
Number:
1 N-channel
Output Capacitance(Coss):
505pF
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
926pF
Gate Charge(Qg):
18.5nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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