HL(Haolin Elec) HB4N60(BEB)
Manufacturer:
HL(Haolin Elec)
Asian Brands
Mfr. Part #:
HB4N60(BEB)
Package:
TO-262
Customer #:
Key Attributes:
600V N-Channel MOSFET, Current:4.0A, Breakdown Voltage:600V
Description:
600V 4A 2Ω@10V,2A 4.5V@250uA 33W TO-262 Single FETs, MOSFETs RoHS
Datasheet:
HL(Haolin Elec) HB4N60(BEB)
Products Specifications
Manufacturer:
Package:
TO-262
Drain to Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Output Capacitance(Coss):
85pF
Input Capacitance(Ciss):
780pF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
20nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HL(Haolin Elec)
213 Products
Shenzhen Haolin Electronics Co., Ltd. was established in 2002. It is specialized in manufacturing MOSFET, Schottky, power transistor 1300 and high voltage silicon reactor. Those products have been widely used in power supply, automotive lighting HID, UPS, residential lighting, small appliances, etc., "HL" MOSFET has a good reputation and stability. Quality has been widely recognized by customers.
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