GOSEMICON GBS65041TOB
Manufacturer:
GOSEMICON
Asian Brands
Mfr. Part #:
GBS65041TOB
Package:
TO-247
Customer #:
Key Attributes:
MOSFET N-CH 650V 66A TO-247
Description:
N-Channel 650V 66A 313W Through Hole TO-247
Datasheet:
GOSEMICON GBS65041TOB
Products Specifications
Manufacturer:
Package:
TO-247
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
66A
Operating Temperature -:
-55℃~+150℃
RDS(on):
34mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Output Capacitance(Coss):
93pF
Input Capacitance(Ciss):
6.26nF
Pd - Power Dissipation:
313W
Gate Charge(Qg):
149nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOSEMICON
40 Products
GOSEMICON, established in 2015 by Shenzhen GuBang Semiconductor Technology Co., Ltd., initially focused on wearable smart devices and intelligent data management platforms before transitioning to the power semiconductor market. The company primarily produces power semiconductor products.
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