GOSEMICON GBS65060TOB
Manufacturer:
GOSEMICON
Asian Brands
Mfr. Part #:
GBS65060TOB
Package:
TO-247
Customer #:
Key Attributes:
MOSFET N-CH 650V 50A TO-247
Description:
N-Channel 650V 50A 192W Through Hole TO-247
Datasheet:
GOSEMICON GBS65060TOB
Products Specifications
Manufacturer:
Package:
TO-247
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
50A
RDS(on):
55mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
70pF
Pd - Power Dissipation:
192W
Input Capacitance(Ciss):
4.3nF
Gate Charge(Qg):
90nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOSEMICON
40 Products
GOSEMICON, established in 2015 by Shenzhen GuBang Semiconductor Technology Co., Ltd., initially focused on wearable smart devices and intelligent data management platforms before transitioning to the power semiconductor market. The company primarily produces power semiconductor products.
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