GOSEMICON GBS65060TOA
Manufacturer:
GOSEMICON
Asian Brands
Mfr. Part #:
GBS65060TOA
Package:
TO-220
Customer #:
Key Attributes:
MOSFET N-CH 650V 50A TO-220
Description:
N-Channel 650V 50A 329W Through Hole TO-220
Datasheet:
GOSEMICON GBS65060TOA
Products Specifications
Manufacturer:
Package:
TO-220
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
50A
RDS(on):
55mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
70pF
Pd - Power Dissipation:
329W
Input Capacitance(Ciss):
4.3nF
Gate Charge(Qg):
90nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOSEMICON
40 Products
GOSEMICON, established in 2015 by Shenzhen GuBang Semiconductor Technology Co., Ltd., initially focused on wearable smart devices and intelligent data management platforms before transitioning to the power semiconductor market. The company primarily produces power semiconductor products.
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