GOFORD G180C06Y
Manufacturer:
GOFORD
Mfr. Part #:
G180C06Y
Package:
TO-252-4
Customer #:
Description:
60V 60A 23mΩ@10V 4V@250uA 1 N-Channel + 1 P-Channel 115W TO-252-4 Single FETs, MOSFETs RoHS
Datasheet:
GOFORD G180C06Y
Products Specifications
Manufacturer:
Package:
TO-252-4
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
23mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
234pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
236pF
Pd - Power Dissipation:
115W
Input Capacitance(Ciss):
4.471nF
Gate Charge(Qg):
62nC@4.5V
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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