GOFORD G080N10T
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
G080N10T
Package:
TO-220
Customer #:
Key Attributes:
MOSFET N-CH 100V 180A TO-220
Description:
N-Channel 100V 180A 370W Through Hole TO-220
Datasheet:
GOFORD G080N10T
Products Specifications
Manufacturer:
Package:
TO-220
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
363pF@50V
Number:
1 N-channel
Output Capacitance(Coss):
435pF
Input Capacitance(Ciss):
13.912nF
Pd - Power Dissipation:
370W
Gate Charge(Qg):
192nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
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Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.