GOFORD G2K3N10H
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
G2K3N10H
Package:
SOT-223
Customer #:
Description:
100V 2A 230mΩ@4.5V,1A 1.5V 1 N-channel 2.4W SOT-223 Single FETs, MOSFETs RoHS
Datasheet:
GOFORD G2K3N10H
Products Specifications
Manufacturer:
Package:
SOT-223
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
230mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
10pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
2.4W
Input Capacitance(Ciss):
434pF
Gate Charge(Qg):
13nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.