GOFORD GT120N10J
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GT120N10J
Package:
TO-251
Customer #:
Key Attributes:
MOSFET N-CH 100V 55A TO-251
Description:
N-Channel 100V 55A 74W Through Hole TO-251
Datasheet:
GOFORD GT120N10J
Products Specifications
Manufacturer:
Package:
TO-251
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
55A
RDS(on):
15mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Input Capacitance(Ciss):
1.66nF
Output Capacitance(Coss):
625pF
Pd - Power Dissipation:
74W
Gate Charge(Qg):
54nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 75 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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