ANHI ASB65R220E
Manufacturer:
ANHI
Asian Brands
Mfr. Part #:
ASB65R220E
Package:
TO-263
Customer #:
Key Attributes:
MOSFET N-CH 650V 20A TO-263
Description:
N-Channel 650V 20A 126W Surface Mount TO-263
Datasheet:
ANHI ASB65R220E
Products Specifications
Manufacturer:
Package:
TO-263
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
20A
RDS(on):
220mΩ@10V,7A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.28pF
Output Capacitance(Coss):
134pF
Input Capacitance(Ciss):
1.547nF
Pd - Power Dissipation:
126W
Gate Charge(Qg):
32.23nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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ANHI
99 Products
ANHI, established in 2019 with a 180 million RMB investment from the Jinan municipal government, focuses on the design, manufacturing, process development, sales, and technical services of power device products and modules. The main products include MOSFETs, super junction MOSFETs, IGBTs, and SiC MOSFETs.
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