ANHI ASB65R120EFD
Manufacturer:
ANHI
Asian Brands
Mfr. Part #:
ASB65R120EFD
Package:
TO-263
Customer #:
Key Attributes:
MOSFET N-CH 655V 30A TO-263
Description:
N-Channel 655V 30A Surface Mount TO-263
Datasheet:
ANHI ASB65R120EFD
Products Specifications
Manufacturer:
Package:
TO-263
Configuration:
-
Drain to Source Voltage:
655V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
-
Output Capacitance(Coss):
89pF
Input Capacitance(Ciss):
2.657nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
55.4nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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ANHI
99 Products
ANHI, established in 2019 with a 180 million RMB investment from the Jinan municipal government, focuses on the design, manufacturing, process development, sales, and technical services of power device products and modules. The main products include MOSFETs, super junction MOSFETs, IGBTs, and SiC MOSFETs.
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