Isolators - Gate Drivers

Results: 5
Manufacturer
2Pai Semi
Package
SOIC-14-300mil
SOIC-14-WB
SOIC-16
SOIC-8
Packaging
CMTI(kV/us)
100kV/us
Current - Output High(IOH)
4A
6A
Propagation Delay(tpd)
30ns;30ns
65ns;65ns
Quiescent Current(Iq)
0.5mA
1.1mA
500uA
Input Logic Level - Low
0.8V~1.2V
Number of Channels
1
2
Isolation voltage(Vrms)
3000
3750
5000
Rise Time
15ns
18ns
Voltage - Supply
3V~5.5V;25V
9.2V~25V;3V~5.5V
9.5V~33V;2.5V~5.5V
Driven Configuration
Half-Bridge
Low Side;High Side;Half-Bridge
Load Type
IGBT;MOSFET
Input Logic Level - High
1.6V~2V
Current - Output Low(IOL)
6A
8A
Fall Time
12ns
Operating Temperature
-40℃~+125℃@(Ta)
-40℃~+125℃@(Tj)
Quiescent Current
1200uA
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Product
Reset All Results: 5
Mpn
Manufacturer
Quantity
Description
Package
Packaging
Date Code
CMTI(kV/us)
Current - Output High(IOH)
Propagation Delay(tpd)
Quiescent Current(Iq)
Input Logic Level - Low
Number of Channels
Isolation voltage(Vrms)
Rise Time
Voltage - Supply
Driven Configuration
Load Type
Input Logic Level - High
Current - Output Low(IOL)
Fall Time
Operating Temperature
Quiescent Current
Asian Brand RoHS
Full Reel:
4A 18ns 12ns 8A SOIC-14-300mil Isolators - Gate Drivers RoHS
SOIC-14-300mil
-
100kV/us
4A
30ns;30ns
500uA
2
5000
18ns
9.2V~25V;3V~5.5V
Low Side;High Side;Half-Bridge
IGBT;MOSFET
8A
12ns
-40℃~+125℃@(Ta)
Asian Brand RoHS
Full Reel:
Half-Bridge 4A 18ns 12ns 8A SOIC-14-WB Isolators - Gate Drivers RoHS
SOIC-14-WB
-
100kV/us
4A
500uA
2
5000
18ns
3V~5.5V;25V
Half-Bridge
IGBT;MOSFET
8A
12ns
-40℃~+125℃@(Ta)
Asian Brand RoHS
Full Reel:
Half-Bridge 4A 18ns 12ns 8A SOIC-16 Isolators - Gate Drivers RoHS
SOIC-16
-
100kV/us
4A
30ns;30ns
0.5mA
2
3000
18ns
9.2V~25V;3V~5.5V
Half-Bridge
IGBT;MOSFET
8A
12ns
-40℃~+125℃@(Tj)
Asian Brand RoHS
Full Reel:
4A 18ns 12ns 8A SOIC-14-WB Isolators - Gate Drivers RoHS
SOIC-14-WB
-
100kV/us
4A
30ns;30ns
1.1mA
2
5000
18ns
9.2V~25V;3V~5.5V
IGBT;MOSFET
8A
12ns
-40℃~+125℃@(Tj)
Asian Brand RoHS
Full Reel:
6A 15ns 12ns 6A SOIC-8 Isolators - Gate Drivers RoHS
SOIC-8
-
100kV/us
6A
65ns;65ns
1200uA
1
3750
15ns
9.5V~33V;2.5V~5.5V
IGBT;MOSFET
6A
12ns
-40℃~+125℃@(Ta)