Infineon IKB10N60T
Manufacturer:
Infineon
Mfr. Part #:
IKB10N60T
Package:
TO-263-3
Customer #:
Key Attributes:
Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HEdiode
Description:
110W 600V TO-263-3 Single IGBTs RoHS
Products Specifications
Manufacturer:
Package:
TO-263-3
Pd - Power Dissipation:
110W
Td(off):
215ns
Td(on):
12ns
Operating Temperature:
-40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
551pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@0.3mA
Gate Charge(Qg):
62nC@15V
Pulsed Current- Forward(Ifm):
30A
Reverse Recovery Time(trr):
115ns
Switching Energy(Eoff):
270uJ
Turn-On Energy (Eon):
160uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
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Infineon
9502 Products
On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.
Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.
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