TI HGT1S7N60B3DS
Manufacturer:
TI
Mfr. Part #:
HGT1S7N60B3DS
Package:
TO-263AB
Customer #:
Description:
60W 600V TO-263AB Single IGBTs
Products Specifications
Manufacturer:
Package:
TO-263AB
Pd - Power Dissipation:
60W
Operating Temperature:
-55℃~+150℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Reverse Recovery Time(trr):
37ns
Switching Energy(Eoff):
120uJ
Turn-On Energy (Eon):
160uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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TI
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Texas Instruments Incorporated designs and manufactures analog technologies, digital signal processing (DSP) and microcontroller (MCU) semiconductors. TI is a leader in semiconductor solutions for analog and digital embedded and applications processing. A global semiconductor company, TI innovates through design, sales and manufacturing operations in more than 30 countries.
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