TI HGTD3N60B3S9A
Manufacturer:
TI
Mfr. Part #:
HGTD3N60B3S9A
Package:
TO-252-3(DPAK)
Customer #:
Description:
33.3W 600V TO-252-3(DPAK) Single IGBTs
Products Specifications
Manufacturer:
Package:
TO-252-3(DPAK)
Td(off):
105ns
Pd - Power Dissipation:
33.3W
Td(on):
18ns
Operating Temperature:
-55℃~+150℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
21nC
Reverse Recovery Time(trr):
-
Switching Energy(Eoff):
-
Turn-On Energy (Eon):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1 |
| Sales Unit | Piece |
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TI
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Texas Instruments Incorporated designs and manufactures analog technologies, digital signal processing (DSP) and microcontroller (MCU) semiconductors. TI is a leader in semiconductor solutions for analog and digital embedded and applications processing. A global semiconductor company, TI innovates through design, sales and manufacturing operations in more than 30 countries.
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