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YANGJIE YJD212080NCTG1

YANGJIE YJD212080NCTG1

Name: YANGJIE YJD212080NCTG1
Brand: YANGJIE

Manufacturer: YANGJIE Asian Brands

Mfr. Part #: YJD212080NCTG1

Package: TO-247

Customer #:

Key Attributes: Silicon Carbide Power MOSFET (N-Channel Enhancement)

Description: N-Channel 1.2kV 38A 220W Through Hole TO-247

Datasheet: YANGJIE YJD212080NCTG1

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

YANGJIE

Package:

TO-247

Drain to Source Voltage:

1.2kV

Current - Continuous Drain(Id):

38A

Operating Temperature -:

-55℃~+175℃

RDS(on):

80mΩ

Gate Threshold Voltage (Vgs(th)):

3.6V

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

4pF

Input Capacitance(Ciss):

890pF

Output Capacitance(Coss):

58pF

Pd - Power Dissipation:

220W

Gate Charge(Qg):

41nC

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	30
Sales Unit	Piece

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YANGJIE

2348 Products

Asian Brand

Yangzhou Yangjie Elec Tech was founded in 2000 and is located in Yangzhou. It is a vertically integrated (IDM) manufacturer that combines semiconductor discrete device chip design and manufacturing, device packaging and testing, and end-to-end sales and services. The main product lines include MOSFETs, IGBTs, SiC-related products, rectifiers, protection devices, small signal devices, and integrated circuits.

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