TOSHIBA GT30J122A(STA1,E,D
Manufacturer:
TOSHIBA
Mfr. Part #:
GT30J122A(STA1,E,D
Package:
TO-3PN
Customer #:
Key Attributes:
Silicon N-Channel IGBT
Description:
120W 600V TO-3PN Single IGBTs RoHS
Datasheet:
TOSHIBA GT30J122A(STA1,E,D
Products Specifications
Manufacturer:
Package:
TO-3PN
Pd - Power Dissipation:
120W
Td(off):
500ns
Td(on):
300ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
2.5nF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
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TOSHIBA
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Toshiba Semiconductor and Storage Products, United States is an independent operating company owned byToshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications.
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