TOSHIBA GT30N135SRA,S1E
Manufacturer:
TOSHIBA
Mfr. Part #:
GT30N135SRA,S1E
Package:
TO-247
Customer #:
Description:
348W 1.35kV TO-247 Single IGBTs RoHS
Datasheet:
TOSHIBA GT30N135SRA,S1E
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
-
Pd - Power Dissipation:
348W
Operating Temperature:
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
1.35kV
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
270nC
Switching Energy(Eoff):
1.3mJ
Turn-On Energy (Eon):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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TOSHIBA
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Toshiba Semiconductor and Storage Products, United States is an independent operating company owned byToshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications.
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