TOSHIBA GT50JR22(S1WLD,E,S
Manufacturer:
TOSHIBA
Mfr. Part #:
GT50JR22(S1WLD,E,S
Package:
TO-3P-3
Customer #:
Key Attributes:
Discrete IGBTs Silicon N-Channel IGBT
Description:
250W 600V TO-3P-3 Single IGBTs RoHS
Datasheet:
TOSHIBA GT50JR22(S1WLD,E,S
Products Specifications
Manufacturer:
Package:
TO-3P-3
Td(off):
330ns
Pd - Power Dissipation:
250W
Td(on):
250ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
2.7nF
Pulsed Current- Forward(Ifm):
100A
Reverse Recovery Time(trr):
350ns
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
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TOSHIBA
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Toshiba Semiconductor and Storage Products, United States is an independent operating company owned byToshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications.
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