ST STGWA50M65DF2
Manufacturer:
ST
Mfr. Part #:
STGWA50M65DF2
Package:
TO-247
Customer #:
Key Attributes:
Trench gate field-stop IGBT, M series 650 V, 50 A low-loss in a TO-247 long leads package
Description:
375W 650V FS (Field Stop) TO-247 Single IGBTs RoHS
Datasheet:
ST STGWA50M65DF2
Products Specifications
Manufacturer:
Package:
TO-247
Pd - Power Dissipation:
375W
Td(off):
130ns
Operating Temperature:
-55℃~+175℃
Td(on):
42ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
88pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
150nC@15V
Reverse Recovery Time(trr):
162ns
Switching Energy(Eoff):
1.57mJ
Turn-On Energy (Eon):
880uJ
Input Capacitance(Cies):
4.2nF
Pulsed Current- Forward(Ifm):
150A
Output Capacitance(Coes):
252pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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