ST STGWA80H65DFB
Manufacturer:
ST
Mfr. Part #:
STGWA80H65DFB
Package:
TO-247
Customer #:
Key Attributes:
Trench gate field-stop IGBT, HB series, 650 V, 80 A high speed
Description:
469W 650V TO-247 Single IGBTs RoHS
Datasheet:
ST STGWA80H65DFB
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
280ns
Pd - Power Dissipation:
469W
Td(on):
84ns
Operating Temperature:
-55℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
215pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
414nC@15V
Reverse Recovery Time(trr):
85ns
Switching Energy(Eoff):
1.5mJ
Turn-On Energy (Eon):
2.1mJ
Input Capacitance(Cies):
10.524nF
Pulsed Current- Forward(Ifm):
240A
Output Capacitance(Coes):
385pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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