Sichainsemi S1M007120PD
Manufacturer:
Sichainsemi
Asian Brands
Mfr. Part #:
S1M007120PD
Package:
TO-247-4L
Customer #:
Key Attributes:
1200V Silicon Carbide Power MOSFET (N Channel Enhancement)
Description:
1.2kV 253A 7mΩ 4V 833W TO-247-4L Single FETs, MOSFETs RoHS
Datasheet:
Sichainsemi S1M007120PD
Products Specifications
Manufacturer:
Package:
TO-247-4L
Drain to Source Voltage:
1.2kV
Current - Continuous Drain(Id):
253A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Input Capacitance(Ciss):
10.931nF
Output Capacitance(Coss):
422pF
Pd - Power Dissipation:
833W
Gate Charge(Qg):
429nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
Sichainsemi
45 Products
Sichainsemi, established in March 2021, is a high-tech chip company based in Ningbo, focusing on silicon carbide (SiC) semiconductors. The company primarily produces SiC power devices, including diodes and MOSFETs.
Recommended Products