Samwin SWYN4N65DD
Manufacturer:
Samwin
Asian Brands
Mfr. Part #:
SWYN4N65DD
Package:
TO-220FTN
Customer #:
Key Attributes:
MOSFET 650V 4A TO-220FTN
Description:
650V 4A 192W Through Hole TO-220FTN
Datasheet:
Samwin SWYN4N65DD
Products Specifications
Manufacturer:
Package:
TO-220FTN
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Pd - Power Dissipation:
192W
Input Capacitance(Ciss):
544pF
Gate Charge(Qg):
16nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
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Samwin
157 Products
Samwin electronic technology co., LTD. (Samwin technology for short) was founded in 2008, headquartered in Xi 'an high-tech zone Huanpu science and technology industrial park, with a research and development center in Shanghai, Shenzhen with a sales and service center, but also with a Taiwan office and Hong Kong import and export business center. Is a collection of research and development, production and sales as one of the high-tech enterprises, products include: medium and high power field effect tube (MOSFET, low to high voltage full series products), insulated gate bipolar transistor (IGBT), diode (including rapid recovery diode and Schottky diode), bridge stack and power management IC, etc..
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