Samwin SWN2N70D
Manufacturer:
Samwin
Asian Brands
Mfr. Part #:
SWN2N70D
Package:
TO-251N
Customer #:
Key Attributes:
MOSFET 700V 2A TO-251N
Description:
700V 2A 83.3W Through Hole TO-251N
Datasheet:
Samwin SWN2N70D
Products Specifications
Manufacturer:
Package:
TO-251N
Drain to Source Voltage:
700V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
13pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
360pF@25V
Pd - Power Dissipation:
83.3W
Gate Charge(Qg):
11nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 80 |
| Sales Unit | Piece |
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Samwin
157 Products
Samwin electronic technology co., LTD. (Samwin technology for short) was founded in 2008, headquartered in Xi 'an high-tech zone Huanpu science and technology industrial park, with a research and development center in Shanghai, Shenzhen with a sales and service center, but also with a Taiwan office and Hong Kong import and export business center. Is a collection of research and development, production and sales as one of the high-tech enterprises, products include: medium and high power field effect tube (MOSFET, low to high voltage full series products), insulated gate bipolar transistor (IGBT), diode (including rapid recovery diode and Schottky diode), bridge stack and power management IC, etc..
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