R+O HT02P260S
Manufacturer:
R+O
Asian Brands
Mfr. Part #:
HT02P260S
Package:
SOT-223
Customer #:
Key Attributes:
MOSFET P-CH 20V 10A SOT-223
Description:
P-Channel 20V 10A 2.8W Surface Mount SOT-223
Datasheet:
R+O HT02P260S
Products Specifications
Manufacturer:
Package:
SOT-223
Drain to Source Voltage:
20V
Current - Continuous Drain(Id):
10A
RDS(on):
16mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
480pF
Number:
1 P-Channel
Output Capacitance(Coss):
520pF
Pd - Power Dissipation:
2.8W
Input Capacitance(Ciss):
2.67nF
Gate Charge(Qg):
30nC@5V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
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R+O
2634 Products
Zhuhai Hongjiacheng Technology Co., Ltd. is an enterprise specializing in the research, development, design, and sales of semiconductor products. Our main products include rectifier bridges, diodes, transistors, protection devices, MOSFETs, and small - signal devices. Our products meet the needs of the consumer market and the industrial market, providing customers with a wide range of product choices.
The company has gathered a large number of experienced professionals, with excellent technical capabilities and rich product development experience, offering customers professional pre - sales and after - sales services. The company manages products with a rigorous attitude of "Building the brand with quality, achieving excellence with fine craftsmanship", operates the brand with high - quality products, and is committed to creating a domestic semiconductor brand with the best quality and service.
Following the development of the domestic market, Hongjiacheng closely tracks the trend of s
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