R+O HP806P550S
Manufacturer:
R+O
Asian Brands
Mfr. Part #:
HP806P550S
Package:
SOP-8
Customer #:
Key Attributes:
MOSFET P-CH 60V 8A SOP-8
Description:
P-Channel 60V 8A 3.1W Surface Mount SOP-8
Datasheet:
R+O HP806P550S
Products Specifications
Manufacturer:
Package:
SOP-8
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
8A
RDS(on):
27mΩ@10V;34mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
156pF
Number:
1 P-Channel
Output Capacitance(Coss):
169pF
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
3.05nF
Gate Charge(Qg):
58.5nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
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R+O
2634 Products
Zhuhai Hongjiacheng Technology Co., Ltd. is an enterprise specializing in the research, development, design, and sales of semiconductor products. Our main products include rectifier bridges, diodes, transistors, protection devices, MOSFETs, and small - signal devices. Our products meet the needs of the consumer market and the industrial market, providing customers with a wide range of product choices.
The company has gathered a large number of experienced professionals, with excellent technical capabilities and rich product development experience, offering customers professional pre - sales and after - sales services. The company manages products with a rigorous attitude of "Building the brand with quality, achieving excellence with fine craftsmanship", operates the brand with high - quality products, and is committed to creating a domestic semiconductor brand with the best quality and service.
Following the development of the domestic market, Hongjiacheng closely tracks the trend of s
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