onsemi AFGB30T65SQDN
Manufacturer:
onsemi
Mfr. Part #:
AFGB30T65SQDN
Package:
TO-263
Customer #:
Description:
220W 650V TO-263 Single IGBTs RoHS
Datasheet:
onsemi AFGB30T65SQDN
Products Specifications
Manufacturer:
Package:
TO-263
Td(off):
63.2ns
Pd - Power Dissipation:
220W
Td(on):
14.5ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.1V@15V,30A
Gate Charge(Qg):
56nC
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
245ns
Turn-On Energy (Eon):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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