onsemi FGY120T65SPD-F085
Manufacturer:
onsemi
Mfr. Part #:
FGY120T65SPD-F085
Package:
TO-247-3
Customer #:
Key Attributes:
Field Stop Trench IGBT With Soft Fast Recovery Diode
Description:
882W 650V TO-247-3 Single IGBTs RoHS
Datasheet:
onsemi FGY120T65SPD-F085
Products Specifications
Manufacturer:
Package:
TO-247-3
Pd - Power Dissipation:
882W
Td(off):
102ns
Td(on):
53ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
50pF
Input Capacitance(Cies):
6.81nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.2V@120mA
Gate Charge(Qg):
162nC@15V
Operating Temperature:
-55℃~+175℃
Output Capacitance(Coes):
440pF
Reverse Recovery Time(trr):
123ns
Switching Energy(Eoff):
3.5mJ
Turn-On Energy (Eon):
6.8mJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 20 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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