onsemi FGD3N60UNDF
Manufacturer:
onsemi
Mfr. Part #:
FGD3N60UNDF
Package:
TO-252
Customer #:
Description:
60W 600V NPT (Non-Punch Through) TO-252 Single IGBTs RoHS
Datasheet:
onsemi FGD3N60UNDF
Products Specifications
Manufacturer:
Package:
TO-252
Td(off):
22ns
Pd - Power Dissipation:
60W
Td(on):
5.5ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
-
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.52V@15V,3A
Gate Charge(Qg):
1.6nC
Operating Temperature:
-55℃~+150℃@(Tj)
Reverse Recovery Time(trr):
21ns
Switching Energy(Eoff):
30uJ
Turn-On Energy (Eon):
52uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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