onsemi HGT1S3N60A4DS9A
Manufacturer:
onsemi
Mfr. Part #:
HGT1S3N60A4DS9A
Package:
D2PAK(TO-263)
Customer #:
Description:
70W 600V D2PAK(TO-263) Single IGBTs RoHS
Datasheet:
onsemi HGT1S3N60A4DS9A
Products Specifications
Manufacturer:
Package:
D2PAK(TO-263)
Td(off):
73ns
Pd - Power Dissipation:
70W
Td(on):
6ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.7V@15V,3A
Gate Charge(Qg):
21nC
Operating Temperature:
-55℃~+150℃@(Tj)
Reverse Recovery Time(trr):
29ns
Switching Energy(Eoff):
-
Turn-On Energy (Eon):
37uJ
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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