onsemi HGT1S7N60A4DS
Manufacturer:
onsemi
Mfr. Part #:
HGT1S7N60A4DS
Package:
D2PAK(TO-263)
Customer #:
Description:
125W 600V D2PAK(TO-263) Single IGBTs RoHS
Datasheet:
onsemi HGT1S7N60A4DS
Products Specifications
Manufacturer:
Package:
D2PAK(TO-263)
Pd - Power Dissipation:
125W
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Operating Temperature:
-55℃~+150℃@(Tj)
Reverse Recovery Time(trr):
-
Switching Energy(Eoff):
60uJ
Turn-On Energy (Eon):
55uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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