onsemi NGB8207ABNT4G
Manufacturer:
onsemi
Mfr. Part #:
NGB8207ABNT4G
Package:
D2PAK
Customer #:
Description:
165W 365V D2PAK Single IGBTs RoHS
Datasheet:
onsemi NGB8207ABNT4G
Products Specifications
Manufacturer:
Package:
D2PAK
Pd - Power Dissipation:
165W
Td(off):
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
365V
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.2V@3.7V,10A
Operating Temperature:
-55℃~+175℃@(Tj)
Switching Energy(Eoff):
-
Turn-On Energy (Eon):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 444 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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