onsemi NXH350N100H4Q2F2S1G
Manufacturer:
onsemi
Mfr. Part #:
NXH350N100H4Q2F2S1G
Package:
Q2PACK-42(47x93)
Customer #:
Description:
276W 1kV FS (Field Stop) Q2PACK-42(47x93) Single IGBTs RoHS
Datasheet:
onsemi NXH350N100H4Q2F2S1G
Products Specifications
Manufacturer:
Package:
Q2PACK-42(47x93)
Pd - Power Dissipation:
276W
Collector-Emitter Breakdown Voltage (Vces):
1kV
Input Capacitance(Cies):
24.146nF@20V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Operating Temperature:
-40℃~+150℃@(Tj)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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