NITRIDE YHJ-65P150AMC
Manufacturer:
NITRIDE
Asian Brands
Mfr. Part #:
YHJ-65P150AMC
Package:
DFN-8(8x8)
Customer #:
Key Attributes:
Casc0de GaN HEMT
Description:
650V 12A 150mΩ@10V 1.7V DFN-8(8x8) Single FETs, MOSFETs RoHS
Datasheet:
NITRIDE YHJ-65P150AMC
Products Specifications
Manufacturer:
Package:
DFN-8(8x8)
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
1pF
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
505pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
10nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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