NITRIDE YHJ-65H225AMC
Manufacturer:
NITRIDE
Asian Brands
Mfr. Part #:
YHJ-65H225AMC
Package:
DFN-8(8x8)
Customer #:
Key Attributes:
65H225 Series Integrated GaNFET
Description:
650V 8A 215mΩ 1.6V 63W DFN-8(8x8) Single FETs, MOSFETs RoHS
Datasheet:
NITRIDE YHJ-65H225AMC
Products Specifications
Manufacturer:
Package:
DFN-8(8x8)
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
8A
RDS(on):
215mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
1pF
Input Capacitance(Ciss):
90pF
Output Capacitance(Coss):
50pF
Pd - Power Dissipation:
63W
Gate Charge(Qg):
1.6nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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