NCE NCE60TD60BT
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCE60TD60BT
Package:
TO-247
Customer #:
Key Attributes:
600V, 60A, Trench FSII Fast IGBT
Description:
316W 600V FS (Field Stop) TO-247 Single IGBTs RoHS
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
170ns
Pd - Power Dissipation:
316W
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
138pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@1mA
Gate Charge(Qg):
262nC@15V
Reverse Recovery Time(trr):
186ns
Switching Energy(Eoff):
900uJ
Turn-On Energy (Eon):
2.2mJ
Input Capacitance(Cies):
7.018nF
Pulsed Current- Forward(Ifm):
180A
Output Capacitance(Coes):
199pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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