NCE NCE30TD60B for sale
NCE NCE30TD60B for sale

NCE NCE30TD60B

Manufacturer: NCE Asian Brands
Mfr. Part #: NCE30TD60B
Package: TO-220
Customer #:
Key Attributes: 600V,30A,Trench FSII Fast IGBT
Description: 190W 600V FS (Field Stop) TO-220 Single IGBTs RoHS
Products Specifications
Manufacturer:
Package:
TO-220
Td(off):
166ns
Pd - Power Dissipation:
190W
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
67pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@1mA
Gate Charge(Qg):
132nC@15V
Operating Temperature:
-55℃~+150℃
Reverse Recovery Time(trr):
178ns
Switching Energy(Eoff):
320uJ
Turn-On Energy (Eon):
360uJ
Input Capacitance(Cies):
3.552nF
Pulsed Current- Forward(Ifm):
90A
Output Capacitance(Coes):
106pF

Additional Information

Type Details
Minimum 1
Multiple 1
Standard Packaging 50
Sales Unit Piece

Compliance & Export Codes

Type Details
RoHS
ECCN -
CNHTS 8541600000
USHTS 8541600080
TARIC 8541600000
CAHTS 8541600010
BRHTS 85416010
INHTS 85416000
MXHTS 8541.60.01
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NCE
720 Products
Asian Brand
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world. NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field. Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.