NCE NCE10TD60BK
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCE10TD60BK
Package:
TO-252-2
Customer #:
Key Attributes:
IGBT 600V 20A TO-252-2
Description:
IGBT FS (Field Stop) 600V 20A 83W Surface Mount TO-252-2
Datasheet:
NCE NCE10TD60BK
Products Specifications
Manufacturer:
Package:
TO-252-2
Td(off):
73ns
Pd - Power Dissipation:
83W
Td(on):
20ns
Collector-Emitter Breakdown Voltage (Vces):
600V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@1mA
Gate Charge(Qg):
44nC@15V
Reverse Recovery Time(trr):
158ns
Switching Energy(Eoff):
110uJ
Turn-On Energy (Eon):
210uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
Recommended Products