NCE NCEP070N12D
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCEP070N12D
Package:
TO-263
Customer #:
Description:
120V 100A 7mΩ@10V 4V@250uA 150W TO-263 Single FETs, MOSFETs RoHS
Products Specifications
Manufacturer:
Package:
TO-263
Drain to Source Voltage:
120V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Pd - Power Dissipation:
150W
Gate Charge(Qg):
57nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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