NCE NCEP040N12
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCEP040N12
Package:
TO-220
Customer #:
Description:
120V 150A 4mΩ@10V 4V@250uA 245W TO-220 Single FETs, MOSFETs RoHS
Products Specifications
Manufacturer:
Package:
TO-220
Drain to Source Voltage:
120V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Pd - Power Dissipation:
245W
Input Capacitance(Ciss):
8.76nF
Output Capacitance(Coss):
620pF
Gate Charge(Qg):
152nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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