NCE NCEP01ND35AG
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCEP01ND35AG
Package:
DFN5X6-8L
Customer #:
Key Attributes:
MOSFET N-CH ARR 100V 35A DFN5X6-8L
Description:
N-Channel Array 100V 35A 50W Surface Mount DFN5x6-8L
Products Specifications
Manufacturer:
Package:
DFN5X6-8L
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
35A
RDS(on):
22mΩ@4.5V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
11pF@50V
Number:
2 N-Channel
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
1.6nF@50V
Gate Charge(Qg):
26nC@50V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Get Best Price
Inquiry
Negotiate
Payment
Shipping
NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
Recommended Products